发明授权
US07875534B2 Realizing N-face III-nitride semiconductors by nitridation treatment
有权
通过氮化处理实现N面III族氮化物半导体
- 专利标题： Realizing N-face III-nitride semiconductors by nitridation treatment
- 专利标题（中）： 通过氮化处理实现N面III族氮化物半导体
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申请号： US12191013申请日： 2008-08-13
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公开(公告)号： US07875534B2公开(公告)日： 2011-01-25
- 发明人: Chen-Hua Yu , Chia-Lin Yu , Ding-Yuan Chen , Wen-Chih Chiou
- 申请人： Chen-Hua Yu , Chia-Lin Yu , Ding-Yuan Chen , Wen-Chih Chiou
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW Hsin-Chu
- 代理机构： Slater & Matsil, L.L.P.
- 主分类号： H01L21/205
- IPC分类号： H01L21/205
摘要：
A method of forming a semiconductor structure includes providing a substrate; forming a buffer/nucleation layer over the substrate; forming a group-III nitride (III-nitride) layer over the buffer/nucleation layer; and subjecting the III-nitride layer to a nitridation. The step of forming the III-nitride layer comprises metal organic chemical vapor deposition.
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