发明授权
- 专利标题： Semiconductor substrate treating method, semiconductor component and electronic appliance
- 专利标题（中）： 半导体衬底处理方法，半导体元件和电子设备
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申请号： US11313255申请日： 2005-12-20
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公开(公告)号： US07875557B2公开(公告)日： 2011-01-25
- 发明人: Hiroyuki Matsuo , Kunihiro Miyazaki , Toshiki Nakajima
- 申请人： Hiroyuki Matsuo , Kunihiro Miyazaki , Toshiki Nakajima
- 申请人地址： JP JP
- 专利权人： Seiko Epson Corporation,Kabushiki Kaisha Toshiba
- 当前专利权人： Seiko Epson Corporation,Kabushiki Kaisha Toshiba
- 当前专利权人地址： JP JP
- 代理机构： Harness, Dickey & Pierce, P.L.C.
- 优先权： JP2004-370228 20041221; JP2005-274764 20050921
- 主分类号： H01L21/302
- IPC分类号： H01L21/302 ; H01L21/461
摘要：
A semiconductor substrate treating method is disclosed that can selectively remove contaminants or unnecessary substances present on the surface of a semiconductor substrate. Also disclosed are a semiconductor component of enhanced reliability produced by this method and an electronic appliance incorporating the semiconductor component. The semiconductor substrate treating method comprises the step of treating a semiconductor substrate with a treating fluid containing NH4OH and HF wherein the relationships 0.30≦X/Y≦0.78 and 0.03≦Y≦6.0 are satisfied, where X represents a concentration [mol/L] of NH4OH in the treating fluid and Y represents a concentration [mol/L] of HF in the treating fluid. Preferably, the treating fluid is substantially free from H2O2. The semiconductor substrate has a surface, at least a part of which is composed of high melting point metal.
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