发明授权
- 专利标题： Hetero-crystalline structure and method of making same
- 专利标题（中）： 异质结构及其制备方法
-
申请号： US12555186申请日： 2009-09-08
-
公开(公告)号： US07875884B2公开(公告)日： 2011-01-25
- 发明人: Nobuhiko Kobayashi , Shih Yuan Wang
- 申请人： Nobuhiko Kobayashi , Shih Yuan Wang
- 申请人地址： US TX Houston
- 专利权人： Hewlett-Packard Development Company, L.P.
- 当前专利权人： Hewlett-Packard Development Company, L.P.
- 当前专利权人地址： US TX Houston
- 主分类号： H01L31/036
- IPC分类号： H01L31/036
摘要：
A hetero-crystalline device structure and a method of making the same include a first layer and a nanostructure integral to a crystallite in the first layer. The first layer is a non-single crystalline material. The nanostructure is a single crystalline material. The nanostructure is grown on the first layer integral to the crystallite using epitaxial growth.
公开/授权文献
- US20090321715A1 HETERO-CRYSTALLINE STRUCTURE AND METHOD OF MAKING SAME 公开/授权日：2009-12-31
信息查询
IPC分类:
