Invention Grant
- Patent Title: Multi-level thin film capacitor on a ceramic substrate and method of manufacturing the same
- Patent Title (中): 陶瓷基板上的多层薄膜电容器及其制造方法
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Application No.: US11734798Application Date: 2007-04-17
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Publication No.: US07875956B2Publication Date: 2011-01-25
- Inventor: Ivoyl P. Koutsaroff , Mark Vandermeulen , Andrew Cervin-Lawry , Atin J. Patel
- Applicant: Ivoyl P. Koutsaroff , Mark Vandermeulen , Andrew Cervin-Lawry , Atin J. Patel
- Applicant Address: US NH Nashua
- Assignee: Paratek Microwave, Inc.
- Current Assignee: Paratek Microwave, Inc.
- Current Assignee Address: US NH Nashua
- Agency: Guntin Meles & Gust, PLC
- Agent Ed Guntin
- Main IPC: H01L51/05
- IPC: H01L51/05

Abstract:
In accordance with the teachings described herein, a multi-level thin film capacitor on a ceramic substrate and method of manufacturing the same are provided. The multi-level thin film capacitor (MLC) may include at least one high permittivity dielectric layer between at least two electrode layers, the electrode layers being formed from a conductive thin film material. A buffer layer may be included between the ceramic substrate and the thin film MLC. The buffer layer may have a smooth surface with a surface roughness (Ra) less than or equal to 0.08 micrometers (um).
Public/Granted literature
- US20080037200A1 Multi-Level Thin Film Capacitor on a Ceramic Substrate and Method of Manufacturing the Same Public/Granted day:2008-02-14
Information query
IPC分类: