Invention Grant
- Patent Title: Electrostatic discharge protection circuit and electrostatic discharge protection method of a semiconductor memory device
- Patent Title (中): 一种半导体存储器件的静电放电保护电路和静电放电保护方法
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Application No.: US12611212Application Date: 2009-11-03
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Publication No.: US07876541B2Publication Date: 2011-01-25
- Inventor: Jung Eon Moon , Dae Gwan Kang , Kook Whee Kwak , Nak Heon Choi , Si Woo Lee , Hee Jeong Son , Yun Suk , Seong Hoon Jeong , Joon Won Lee
- Applicant: Jung Eon Moon , Dae Gwan Kang , Kook Whee Kwak , Nak Heon Choi , Si Woo Lee , Hee Jeong Son , Yun Suk , Seong Hoon Jeong , Joon Won Lee
- Applicant Address: KR Kyoungki-do
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR Kyoungki-do
- Agency: Ladas & Parry LLP
- Priority: KR10-2006-0034092 20060414
- Main IPC: H02H9/00
- IPC: H02H9/00
Abstract:
An electrostatic discharge (ESD) protection circuit protects a gate oxide of elements in an internal circuit against ESD. During an ESD test, if the sum of driving voltages of ESD protectors connected between a power pad and a ground pad is higher than the gate oxide breakdown voltage of elements in the internal circuit, the structure of the ESD protector is changed or another ESD protector is additionally provided so as to protect the gate oxide of the elements in the internal circuit against ESD.
Public/Granted literature
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