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US07876606B2 Integrated circuit for programming a memory cell 有权
用于编程存储单元的集成电路

Integrated circuit for programming a memory cell
摘要:
An integrated circuit includes an array of resistance changing memory cells. The array includes a first portion. The integrated circuit includes a circuit configured to apply a set pulse having a first pulse width to a first memory cell in the first portion to set the first memory cell. The first pulse width is based on a predetermined error percentage for the first portion.
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