Invention Grant
- Patent Title: Surface emitting laser
- Patent Title (中): 表面发射激光
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Application No.: US12105481Application Date: 2008-04-18
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Publication No.: US07876800B2Publication Date: 2011-01-25
- Inventor: Mitsuhiro Ikuta
- Applicant: Mitsuhiro Ikuta
- Applicant Address: JP Tokyo
- Assignee: Canon Kabushiki Kaisha
- Current Assignee: Canon Kabushiki Kaisha
- Current Assignee Address: JP Tokyo
- Agency: Fitzpatrick, Cella, Harper & Scinto
- Priority: JP2007-111318 20070420
- Main IPC: H01S5/00
- IPC: H01S5/00

Abstract:
A surface emitting laser having a photonic crystal layer 130 on a substrate 105 with an active layer therebetween, in which the photonic crystal layer includes at least a first periodic structure for resonating in an in-plane direction and a second periodic structure for modulating a light intensity distribution in an in-plane direction. The light intensity in the photonic crystal layer is periodically distributed to a region having high light intensity and a region having low light intensity by the second periodic structure. Further, a conductive film 170 for performing current injection into the active layer is selectively provided just above the region having low light intensity. The surface emitting laser provides suppression of light absorption and highly efficient current injection into an active layer to attain a high power.
Public/Granted literature
- US20090232179A1 SURFACE EMITTING LASER Public/Granted day:2009-09-17
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