Invention Grant
US07877855B2 Method of forming vertical coupling structure for non-adjacent resonators
有权
形成非相邻谐振器的垂直耦合结构的方法
- Patent Title: Method of forming vertical coupling structure for non-adjacent resonators
- Patent Title (中): 形成非相邻谐振器的垂直耦合结构的方法
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Application No.: US11969922Application Date: 2008-01-07
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Publication No.: US07877855B2Publication Date: 2011-02-01
- Inventor: Chia-Cheng Chuang , Ruey-Beei Wu , Tze-Min Shen
- Applicant: Chia-Cheng Chuang , Ruey-Beei Wu , Tze-Min Shen
- Applicant Address: TW Hsinchu TW Taipei
- Assignee: Industrial Technology Research Institute,National Taiwan University
- Current Assignee: Industrial Technology Research Institute,National Taiwan University
- Current Assignee Address: TW Hsinchu TW Taipei
- Agency: Jianq Chyun IP Office
- Priority: TW96123207A 20070627
- Main IPC: H04R31/00
- IPC: H04R31/00

Abstract:
A method for forming a vertical coupling structure for non-adjacent resonators is provided to have a first and a second resonators, a dielectric material layer, a first and a second high-frequency transmission lines and at least one via pole. The first and the second resonators respectively have a first and a second opposite metal surfaces. The dielectric material layer is disposed between the opposite second metal surfaces of the first and the second resonators. The first and the second transmission lines are respectively arranged at sides of the first metal surfaces of the first resonator and the second resonator. The first high-frequency transmission line is vertically connected to the second high-frequency transmission line by the via pole.
Public/Granted literature
- US20090000106A1 METHOD OF FORMING VERTICAL COUPLING STRUCTURE FOR NON-ADJACENT RESONATORS Public/Granted day:2009-01-01
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