Invention Grant
- Patent Title: Method of forming a wiring having carbon nanotube
- Patent Title (中): 形成具有碳纳米管的布线的方法
-
Application No.: US12387299Application Date: 2009-04-29
-
Publication No.: US07877865B2Publication Date: 2011-02-01
- Inventor: Sun-Woo Lee , Seong-Ho Moon , Dong-Woo Kim , Jung-Hyeon Kim , Hong-Sik Yoon
- Applicant: Sun-Woo Lee , Seong-Ho Moon , Dong-Woo Kim , Jung-Hyeon Kim , Hong-Sik Yoon
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Mills & Onello, LLP
- Priority: KR10-2008-0040975 20080501
- Main IPC: H01R43/00
- IPC: H01R43/00 ; H01L21/44

Abstract:
In a method of forming a wiring having a carbon nanotube, a lower wiring is formed on a substrate, and a catalyst layer is formed on the lower wiring. An insulating interlayer is formed on the substrate to cover the catalyst layer, and an opening is formed through the insulating interlayer to expose an upper face of the catalyst layer. A carbon nanotube wiring is formed in the opening, and an upper wiring is formed on the carbon nanotube wiring and the insulating interlayer to be electrically connected to the carbon nanotube wiring. A thermal stress is generated between the carbon nanotube wiring and the upper wiring to produce a dielectric breakdown of a native oxide layer formed on a surface of the carbon nanotube wiring. A wiring having a reduced electrical resistance between the carbon nanotube wiring and the upper wiring may be obtained.
Public/Granted literature
- US20090271982A1 Method of forming a wiring having carbon nanotube Public/Granted day:2009-11-05
Information query