发明授权
- 专利标题: Method for manufacturing semiconductor optical device
- 专利标题(中): 制造半导体光学器件的方法
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申请号: US11772297申请日: 2007-07-02
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公开(公告)号: US07879635B2公开(公告)日: 2011-02-01
- 发明人: Toshihiko Shiga , Hitoshi Sakuma
- 申请人: Toshihiko Shiga , Hitoshi Sakuma
- 申请人地址: JP Tokyo
- 专利权人: Mitsubishi Electric Corporation
- 当前专利权人: Mitsubishi Electric Corporation
- 当前专利权人地址: JP Tokyo
- 代理机构: Leydig, Voit & Mayer, Ltd.
- 优先权: JP2006-199574 20060721; JP2007-137581 20070524
- 主分类号: H01L21/00
- IPC分类号: H01L21/00
摘要:
A method for manufacturing a laser diode includes: providing a semiconductor structure in which semiconductor layers are laminated; forming a waveguide ridge in the layers; forming an SiO2 film over the entire surface; forming a second resist pattern covering the SiO2 film in channels adjacent the waveguide ridge such that top surfaces of the second resist pattern in the channels are higher than the top surface of a p-GaN layer in the waveguide ridge and lower than the top surface of the SiO2 film on the top of the waveguide ridge, the second resist pattern exposing the top surface of the SiO2 film on the top of the waveguide ridge; removing the SiO2 film, using the second resist pattern as a mask, to expose the top surface of the p-GaN layer in the waveguide ridge; and forming an electrode layer on the top surface of the p-GaN layer.
公开/授权文献
- US20080020502A1 METHOD FOR MANUFACTURING SEMICONDUCTOR OPTICAL DEVICE 公开/授权日:2008-01-24