发明授权
- 专利标题: Integrated circuit having stress tuning layer
- 专利标题(中): 具有应力调整层的集成电路
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申请号: US11435436申请日: 2006-05-16
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公开(公告)号: US07880278B2公开(公告)日: 2011-02-01
- 发明人: Shin-Puu Jeng , Clinton Chao , Szu Wei Lu
- 申请人: Shin-Puu Jeng , Clinton Chao , Szu Wei Lu
- 申请人地址: TW Hsin-Chu
- 专利权人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址: TW Hsin-Chu
- 代理机构: Slater & Matsil, L.L.P.
- 主分类号: H01L23/495
- IPC分类号: H01L23/495
摘要:
Warpage and breakage of integrated circuit substrates is reduced by compensating for the stress imposed on the substrate by thin films formed on a surface of the substrate. Particularly advantageous for substrates having a thickness substantially less than about 150 μm, a stress-tuning layer is formed on a surface of the substrate to substantially offset or balance stress in the substrate which would otherwise cause the substrate to bend. The substrate includes a plurality of bonding pads on a first surface for electrical connection to other component.
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