发明授权
- 专利标题: Methods of making quantum dot films
- 专利标题(中): 制作量子点膜的方法
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申请号: US12395592申请日: 2009-02-27
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公开(公告)号: US07881091B2公开(公告)日: 2011-02-01
- 发明人: Edward Sargent , Gerasimos Konstantatos , Larissa Levina , Ian Howard , Ethan J. D. Klem , Jason Clifford
- 申请人: Edward Sargent , Gerasimos Konstantatos , Larissa Levina , Ian Howard , Ethan J. D. Klem , Jason Clifford
- 申请人地址: US CA Menlo Park
- 专利权人: InVisage Technologies. Inc.
- 当前专利权人: InVisage Technologies. Inc.
- 当前专利权人地址: US CA Menlo Park
- 代理机构: Schwegman, Lundberg & Woessner, P.A.
- 主分类号: G11C11/00
- IPC分类号: G11C11/00
摘要:
Optical and optoelectronic devices and methods of making same. Under one aspect, an optical device includes an integrated circuit an array of conductive regions; and an optically sensitive material over at least a portion of the integrated circuit and in electrical communication with at least one conductive region of the array of conductive regions. Under another aspect, a method of forming a nanocrystalline film includes fabricating a plurality of nanocrystals having a plurality of first ligands attached to their outer surfaces; exchanging the first ligands for second ligands of different chemical composition than the first ligands; forming a film of the ligand-exchanged nanocrystals; removing the second ligands; and fusing the cores of adjacent nanocrystals in the film to form an electrical network of fused nanocrystals. Under another aspect, a film includes a network of fused nanocrystals, the nanocrystals having a core and an outer surface, wherein the core of at least a portion of the fused nanocrystals is in direct physical contact and electrical communication with the core of at least one adjacent fused nanocrystal, and wherein the film has substantially no defect states in the regions where the cores of the nanocrystals are fused.
公开/授权文献
- US20090305452A1 Methods of Making Quantum Dot Films 公开/授权日:2009-12-10
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