Invention Grant
US07881350B2 Laser apparatus, laser irradiation method, and manufacturing method of semiconductor device
有权
激光装置,激光照射方法以及半导体装置的制造方法
- Patent Title: Laser apparatus, laser irradiation method, and manufacturing method of semiconductor device
- Patent Title (中): 激光装置,激光照射方法以及半导体装置的制造方法
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Application No.: US11730973Application Date: 2007-04-05
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Publication No.: US07881350B2Publication Date: 2011-02-01
- Inventor: Hidekazu Miyairi , Akihisa Shimomura , Tamae Takano , Masaki Koyama
- Applicant: Hidekazu Miyairi , Akihisa Shimomura , Tamae Takano , Masaki Koyama
- Applicant Address: JP Kanagawa-Ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Kanagawa-Ken
- Agency: Nixon Peabody LLP
- Agent Jeffrey L. Costellia
- Priority: JP2002-269655 20020917
- Main IPC: H01S3/10
- IPC: H01S3/10

Abstract:
It is an object to provide a laser apparatus, a laser irradiating method and a manufacturing method of a semiconductor device that can perform uniform a process with a laser beam to an object uniformly. The present invention provides a laser apparatus comprising an optical system for sampling a part of a laser beam emitted from an oscillator, a sensor for generating an electric signal including fluctuation in energy of the laser beam as a data from the part of the laser beam, a means for performing signal processing to the electrical signal to grasp a state of the fluctuation in energy of the laser beam, and controlling a relative speed of an beam spot of the laser beam to an object in order to change in phase with the fluctuation in energy of the laser beam.
Public/Granted literature
- US20070195837A1 Laser apparatus, laser irradiation method, and manufacturing method of semiconductor device Public/Granted day:2007-08-23
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