Invention Grant
- Patent Title: Method for preparing a source material for ion implantation
- Patent Title (中): 离子注入源材料的制备方法
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Application No.: US11697790Application Date: 2007-04-09
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Publication No.: US07883573B2Publication Date: 2011-02-08
- Inventor: Amitabh Jain
- Applicant: Amitabh Jain
- Applicant Address: US TX Dallas
- Assignee: Texas Instruments Incorporated
- Current Assignee: Texas Instruments Incorporated
- Current Assignee Address: US TX Dallas
- Agent Yingsheng Tung; Wade J. Brady, III; Frederick J. Telecky, Jr.
- Main IPC: C09D201/00
- IPC: C09D201/00
Abstract:
The present invention provides, for use in a semiconductor manufacturing process, a method (100) of preparing an ion-implantation source material. The method includes providing (110) a deliquescent ion implantation source material and mixing (110) the deliquescent ion implantation source material with an organic liquid to form a paste.
Public/Granted literature
- US20070178651A1 Method for Preparing a Source Material for Ion Implantation Public/Granted day:2007-08-02
Information query
IPC分类:
