Invention Grant
- Patent Title: Image sensor and method for manufacturing the same
- Patent Title (中): 图像传感器及其制造方法
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Application No.: US12046134Application Date: 2008-03-11
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Publication No.: US07883922B2Publication Date: 2011-02-08
- Inventor: Chang-Hun Han
- Applicant: Chang-Hun Han
- Applicant Address: KR Seoul
- Assignee: Dongbu HiTek Co., Ltd.
- Current Assignee: Dongbu HiTek Co., Ltd.
- Current Assignee Address: KR Seoul
- Agency: Sherr & Vaughn, PLLC
- Priority: KR10-2007-0024905 20070314
- Main IPC: H01L21/00
- IPC: H01L21/00

Abstract:
An image sensor and a method for manufacturing an image sensor that has an increased aspect ratio. An image sensor and a method for manufacturing an image sensor that have a relatively large process margin (e.g. even in high level pixels), which may reduce and/or eliminate restrictions in downscaling an image sensor. An image sensor may include at least one of a first unit pixel including a first transfer transistor, a second unit pixel including a second drive transistor, and a contact electrically connecting a floating diffusion region of the first unit pixel with the second drive transistor of the second unit pixel. A method of manufacturing an image sensor including at least one of forming a first unit pixel including a first transfer transistor, forming a second unit pixel including a second drive transistor, and forming a contact electrically connecting a floating diffusion region of the first unit pixel with the second drive transistor of the second unit pixel.
Public/Granted literature
- US20080224189A1 IMAGE SENSOR AND METHOD FOR MANUFACTURING THE SAME Public/Granted day:2008-09-18
Information query
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