Planarization of a layer over a cavity

Invention Grant

US07884021B2 Planarization of a layer over a cavity 有权

Title translation: 在空腔上平坦化一层

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Patent Title: Planarization of a layer over a cavity
Patent Title (中): 在空腔上平坦化一层
Application No.: US11679767

Application Date: 2007-02-27
Publication No.: US07884021B2

Publication Date: 2011-02-08
Inventor: Shaoher X. Pan , Chii Guang Lee
Applicant: Shaoher X. Pan , Chii Guang Lee
Applicant Address: US CA Sunnyvale
Assignee: Spartial Photonics, Inc.
Current Assignee: Spartial Photonics, Inc.
Current Assignee Address: US CA Sunnyvale
Agency: Fish & Richardson P.C.
Main IPC: H01L21/4757
IPC: H01L21/4757

Abstract:

A method for fabricating a micro structure includes disposing a sacrificial material in a recess formed in a lower layer and forming a layer of compensatory material on the sacrificial material in the recess. The compensatory material is higher than the upper surface of the lower layer. A first portion of the compensatory material is removed to form a substantially flat surface on the sacrificial material. The substantially flat surface is substantially co-planar with the upper surface of the lower layer. An upper layer is formed on the lower layer and the substantially flat surface.

Abstract(Chinese):

一种用于制造微结构的方法包括将牺牲材料设置在形成在下层中的凹陷中并在凹陷中的牺牲材料上形成补偿材料层。补偿材料高于下层的上表面。去除补偿材料的第一部分以在牺牲材料上形成基本平坦的表面。基本平坦的表面与下层的上表面基本上共面。上层形成在下层和基本平坦的表面上。

Public/Granted literature

US20080203054A1 PLANARIZATION OF A LAYER OVER A CAVITY Public/Granted day:2008-08-28

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/34	...具有H01L21/06，H01L21/16及H01L21/18各组不包含的或有或无杂质，例如掺杂材料的半导体的器件
H01L21/46	....用H01L21/36至H01L21/428各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/44）
H01L21/461	.....改变半导体材料的表面物理特性或形状的，例如腐蚀、抛光、切割
H01L21/469	......在半导体材料上形成绝缘层的，例如，用于掩膜的或应用光刻技术的（密封层入H01L21/56）以及这些层的后处理
H01L21/4757	.......后处理