发明授权
- 专利标题: Thin film deposition
- 专利标题(中): 薄膜沉积
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申请号: US11260899申请日: 2005-10-28
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公开(公告)号: US07884032B2公开(公告)日: 2011-02-08
- 发明人: Mengqi Ye , Peijun Ding , Hougong Wang , Zhendong Liu
- 申请人: Mengqi Ye , Peijun Ding , Hougong Wang , Zhendong Liu
- 申请人地址: US CA Santa Clara
- 专利权人: Applied Materials, Inc.
- 当前专利权人: Applied Materials, Inc.
- 当前专利权人地址: US CA Santa Clara
- 代理机构: Konrad Raynes & Victor LLP
- 主分类号: H01L21/469
- IPC分类号: H01L21/469
摘要:
A system, method and apparatus is capable of producing layers of various materials stacked on one another on a substrate without exposing the substrate to the pressure and contaminants of ambient air until the stack is complete. In one aspect, the stack of layers can include both an insulative layer of one or more insulative films, and a conductive metal layer of one or more conductive metal layer films. In another aspect, a bias signal of positive and negative voltage pulses may be applied to a target of a deposition chamber to facilitate deposition of the target material in a suitable fashion. In yet another aspect, one or more of the deposition chambers may have associated therewith a pump which combines a turbomolecular pump and a cryogenic pump to generate an ultra high vacuum in that chamber. Other features are described and claimed.
公开/授权文献
- US20070099438A1 Thin film deposition 公开/授权日:2007-05-03