发明授权
- 专利标题: Thin film transistor array panel and manufacturing method thereof
- 专利标题(中): 薄膜晶体管阵列面板及其制造方法
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申请号: US12043615申请日: 2008-03-06
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公开(公告)号: US07884365B2公开(公告)日: 2011-02-08
- 发明人: Young-Mi Tak , Seung-Soo Baek , Joo-Ae Youn , Dong-Gyu Kim
- 申请人: Young-Mi Tak , Seung-Soo Baek , Joo-Ae Youn , Dong-Gyu Kim
- 申请人地址: KR Suwon-Si
- 专利权人: Samsung Electronic S Co., Ltd.
- 当前专利权人: Samsung Electronic S Co., Ltd.
- 当前专利权人地址: KR Suwon-Si
- 代理机构: F. Chau & Associates, LLC
- 优先权: KR2002-0072288 20021120
- 主分类号: H01L29/04
- IPC分类号: H01L29/04 ; H01L31/036 ; H01L31/0376 ; H01L31/20
摘要:
A TFT array panel includes: first and second gate members connected to each other; a gate insulating layer formed on the first and the second gate members; first and second semiconductor members formed on the gate insulating layer opposite the first and the second gate members, respectively; first and second source members connected to each other and located near the first and the second semiconductor members, respectively; first and second drain members located near the first and the second semiconductor members, respectively, and located opposite the first and the second source members with respect to the first and the second gate members, respectively; and a pixel electrode connected to the first and the second drain members. The first gate, semiconductor, source, and drain members form a first TFT, and the second gate, semiconductor, source, and drain members form a second TFT.
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