Invention Grant
- Patent Title: Tunable embedded inductor devices
- Patent Title (中): 可调谐嵌入式电感器件
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Application No.: US12037622Application Date: 2008-02-26
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Publication No.: US07884697B2Publication Date: 2011-02-08
- Inventor: Chang-Lin Wei , Cheng-Hua Tsai , Chin-Sun Shyu , Kuo-Chiang Chin , Syun Yu
- Applicant: Chang-Lin Wei , Cheng-Hua Tsai , Chin-Sun Shyu , Kuo-Chiang Chin , Syun Yu
- Applicant Address: TW Hsinchu
- Assignee: Industrial Technology Research Institute
- Current Assignee: Industrial Technology Research Institute
- Current Assignee Address: TW Hsinchu
- Priority: TW96119711A 20070601; TW97102357A 20080122
- Main IPC: H01F5/00
- IPC: H01F5/00

Abstract:
The invention provides tunable embedded high frequency inductor devices. The inductor device comprises a dielectric substrate. A first conductive line is disposed on a first surface of the dielectric substrate. A second conductive line is disposed on a second surface of the dielectric substrate. An interconnection is disposed perforating the dielectric substrate and connecting the first conductive line with the second conductive line. A coupling region is defined between the first and the second conductive lines. A conductive plug connecting the first conductive line and the second line is disposed in the coupling region. Alternatively, an opening is disposed in the first and second conductive lines to tune inductance of the inductor.
Public/Granted literature
- US20080297298A1 TUNABLE EMBEDDED INDUCTOR DEVICES Public/Granted day:2008-12-04
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