Invention Grant
US07885128B2 Redundant memory array for replacing memory sections of main memory
有权
冗余内存阵列,用于替换主内存的内存部分
- Patent Title: Redundant memory array for replacing memory sections of main memory
- Patent Title (中): 冗余内存阵列,用于替换主内存的内存部分
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Application No.: US12255523Application Date: 2008-10-21
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Publication No.: US07885128B2Publication Date: 2011-02-08
- Inventor: Yoshinori Fujiwara
- Applicant: Yoshinori Fujiwara
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Dorsey & Whitney LLP
- Main IPC: G11C29/00
- IPC: G11C29/00

Abstract:
Memories and methods for replacing memory sections of a main memory array by mapping memory addresses for an entire main memory section to at least one memory section of a redundant memory array. One such memory includes a fuse block having programmable elements configured to be programmed to identify main memory sections to be mapped to redundant memory sections of the redundant memory array. The memory further includes a redundant memory logic circuit coupled to the redundant memory array and the fuse block. The redundant memory logic is configured to map the memory for a main memory section identified in the fuse block to at least one of the redundant memory sections of the redundant memory array.
Public/Granted literature
- US20100097871A1 REDUNDANT MEMORY ARRAY FOR REPLACING MEMORY SECTIONS OF MAIN MEMORY Public/Granted day:2010-04-22
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