发明授权
US07885169B2 Electric field sensor having vertical structure, fabrication method thereof, and storage unit using the same
有权
具有垂直结构的电场传感器,其制造方法和使用该电场传感器的存储单元
- 专利标题: Electric field sensor having vertical structure, fabrication method thereof, and storage unit using the same
- 专利标题(中): 具有垂直结构的电场传感器,其制造方法和使用该电场传感器的存储单元
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申请号: US12138055申请日: 2008-06-12
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公开(公告)号: US07885169B2公开(公告)日: 2011-02-08
- 发明人: Simon Buehlmann , Hyoung-soo Ko , Ju-hwan Jung , Seung-bum Hong
- 申请人: Simon Buehlmann , Hyoung-soo Ko , Ju-hwan Jung , Seung-bum Hong
- 申请人地址: KR Suwon-si
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人地址: KR Suwon-si
- 代理机构: Sughrue Mion, PLLC
- 优先权: KR10-2007-0101667 20071009
- 主分类号: G11B7/00
- IPC分类号: G11B7/00
摘要:
An electric field sensor includes a substrate having a low resistive semiconductor layer doped with a high-density dopant as the top layer of the substrate, a high resistive semiconductor layer doped with a low-density dopant, the high resistive semiconductor layer located at a partial area on the low resistive semiconductor layer, and a conductive layer located on the high resistive semiconductor layer, wherein a change of an electric field is detected by a change of a current flowing through the low resistive semiconductor layer, the high resistive semiconductor layer, and the conductive layer.
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