发明授权
- 专利标题: Semiconductor device and method for manufacturing the same
- 专利标题(中): 半导体装置及其制造方法
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申请号: US12473299申请日: 2009-05-28
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公开(公告)号: US07888163B2公开(公告)日: 2011-02-15
- 发明人: Akihiro Chida , Takaaki Nagata
- 申请人: Akihiro Chida , Takaaki Nagata
- 申请人地址: JP Atsugi-shi, Kanagawa-ken
- 专利权人: Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人: Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人地址: JP Atsugi-shi, Kanagawa-ken
- 代理机构: Robinson Intellectual Property Law Office, P.C.
- 代理商 Eric J. Robinson
- 优先权: JP2008-149535 20080606
- 主分类号: H01L21/00
- IPC分类号: H01L21/00
摘要:
An object is to increase resistance against an electrostatic breakdown and to increase resistance to an external stress. Another object is to reduce cost by simplifying the manufacturing process. In a step in which an element formation layer is provided between a first organic resin layer provided with a first conductive film on its surface and a second organic resin layer provided with a second conductive film on its surface to electrically connect the first conductive film and the second conductive film with a contact conductor formed in each of the organic resin layers, the contact conductor provided in each of the first organic resin layer and the second organic resin layer is manufactured by making paste penetrate before an organic resin is cured and then curing the organic resin layer.