Invention Grant
- Patent Title: Pixel structure for a solid state light emitting device
- Patent Title (中): 用于固态发光器件的像素结构
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Application No.: US12015285Application Date: 2008-01-16
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Publication No.: US07888686B2Publication Date: 2011-02-15
- Inventor: George Chik , Thomas MacElwee , Iain Calder , E. Steven Hill
- Applicant: George Chik , Thomas MacElwee , Iain Calder , E. Steven Hill
- Applicant Address: CA Kanata, Ontario
- Assignee: Group IV Semiconductor Inc.
- Current Assignee: Group IV Semiconductor Inc.
- Current Assignee Address: CA Kanata, Ontario
- Agency: Allen, Dyer, Doppelt, Milbrath & Gilchrist, P.A.
- Main IPC: H01L33/00
- IPC: H01L33/00 ; H01L33/06

Abstract:
A light emitting device includes an active layer structure, which has one or more active layers with luminescent centers, e.g. a wide bandgap material with semiconductor nano-particles, deposited on a substrate. For the practical extraction of light from the active layer structure, a transparent electrode is disposed over the active layer structure and a base electrode is placed under the substrate. Transition layers, having a higher conductivity than a top layer of the active layer structure, are formed at contact regions between the upper transparent electrode and the active layer structure, and between the active layer structure and the substrate. Accordingly the high field regions associated with the active layer structure are moved back and away from contact regions, thereby reducing the electric field necessary to generate a desired current to flow between the transparent electrode, the active layer structure and the substrate, and reducing associated deleterious effects of larger electric fields.
Public/Granted literature
- US20080246046A1 Pixel Structure For A Solid State Light Emitting Device Public/Granted day:2008-10-09
Information query
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