发明授权
- 专利标题： Semiconductor device and method of manufacturing the same
- 专利标题（中）： 半导体装置及其制造方法
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申请号： US12360165申请日： 2009-01-27
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公开(公告)号： US07888737B2公开(公告)日： 2011-02-15
- 发明人: Hiroyuki Fujimoto , Yuki Togashi
- 申请人： Hiroyuki Fujimoto , Yuki Togashi
- 申请人地址： JP Tokyo
- 专利权人： Elpida Memory, Inc.
- 当前专利权人： Elpida Memory, Inc.
- 当前专利权人地址： JP Tokyo
- 代理机构： Young & Thompson
- 优先权： JP2008-042560 20080225
- 主分类号： H01L27/12
- IPC分类号： H01L27/12
摘要：
A semiconductor device includes: a monocrystalline substrate; an inter-layer film formed on the monocrystalline substrate; a contact hole penetrating the inter-layer film and partially exposing an upper surface of the monocrystalline substrate; a sidewall formed on an inner surface of the contact hole; a plurality of first monocrystalline layers which include few defects, fill the contact hole, and cover the inter-layer film; and a plurality of second monocrystalline layers which include many defects and cover the sidewall and an upper surface of the inter-layer film so as to be sandwiched between the first monocrystalline layers and the inter-layer film.
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