发明授权
US07888757B2 Magnetic random access memory (MRAM) device on thermally-sensitive substrate
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热敏基片上的磁性随机存取存储器（MRAM）器件
- 专利标题： Magnetic random access memory (MRAM) device on thermally-sensitive substrate
- 专利标题（中）： 热敏基片上的磁性随机存取存储器（MRAM）器件
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申请号： US11923874申请日： 2007-10-25
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公开(公告)号： US07888757B2公开(公告)日： 2011-02-15
- 发明人: Arunava Gupta
- 申请人： Arunava Gupta
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理机构： McGinn IP Law Group, PLLC
- 代理商 Vazken Alexanian
- 主分类号： H01L29/82
- IPC分类号： H01L29/82 ; H01L43/00
摘要：
A method of forming a magnetic memory device (and a resulting structure) on a low-temperature substrate, includes forming the memory device on a transparent substrate coated with a decomposable material layer subject to rapid heating resulting in a predetermined high pressure, and transferring the memory device to the low-temperature substrate.
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