Invention Grant
- Patent Title: Infrared detector and fabricating method of infrared detector
- Patent Title (中): 红外探测器和红外探测器的制造方法
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Application No.: US12314955Application Date: 2008-12-19
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Publication No.: US07888762B2Publication Date: 2011-02-15
- Inventor: Kazuhide Abe
- Applicant: Kazuhide Abe
- Applicant Address: JP Tokyo
- Assignee: Oki Semiconductor Co., Ltd.
- Current Assignee: Oki Semiconductor Co., Ltd.
- Current Assignee Address: JP Tokyo
- Agency: Rabin & Berdo, PC
- Priority: JP2008-011802 20080122
- Main IPC: H01L31/058
- IPC: H01L31/058

Abstract:
There is provided an infrared detector including: a silicon substrate provided with a concave portion; an infrared receiver having a polysilicon layer; and a beam that supports the infrared receiver above the concave portion, and extends along a side of the infrared receiver from the infrared receiver to connect with the silicon substrate, the beam having at least two bent portions, wherein at least one of the bent portions of the beam is disposed at a position on a side opposite to the concave portion with the polysilicon layer as a reference point.
Public/Granted literature
- US20090184246A1 Infrared detector and fabricating method of infrared detector Public/Granted day:2009-07-23
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