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US07888798B2 Semiconductor devices including interlayer conductive contacts and methods of forming the same 有权
包括层间导电触点的半导体器件及其形成方法

Semiconductor devices including interlayer conductive contacts and methods of forming the same
摘要：
In a semiconductor device and a method of forming the same, the semiconductor device comprises: a first insulating layer on an underlying contact region of the semiconductor device, the first insulating layer having an upper surface; a first conductive pattern in a first opening through the first insulating layer, an upper portion of the first conductive pattern being of a first width, an upper surface of the first conductive pattern being recessed relative to the upper surface of the first insulating layer so that the upper surface of the first conductive pattern has a height relative to the underlying contact region that is less than a height of the upper surface of the first insulating layer relative to the underlying contact region; and a second conductive pattern contacting the upper surface of the first conductive pattern, a lower portion of the second conductive pattern being of a second width that is less than the first width.
摘要（中）：

在半导体器件及其形成方法中，半导体器件包括：在半导体器件的下部接触区域上的第一绝缘层，第一绝缘层具有上表面; 在通过第一绝缘层的第一开口中的第一导电图案，第一导电图案的上部具有第一宽度，第一导电图案的上表面相对于第一绝缘层的上表面凹陷，使得 第一导电图案的上表面相对于下面的接触区域具有相对于下面的接触区域小于第一绝缘层的上表面的高度的高度; 以及与第一导电图案的上表面接触的第二导电图案，第二导电图案的下部具有小于第一宽度的第二宽度。

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