Invention Grant
- Patent Title: Programmable gain MOS amplifier
- Patent Title (中): 可编程增益MOS放大器
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Application No.: US12480616Application Date: 2009-06-08
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Publication No.: US07889008B2Publication Date: 2011-02-15
- Inventor: Yi-Bin Lee , Po-Sen Tseng
- Applicant: Yi-Bin Lee , Po-Sen Tseng
- Applicant Address: TW Science-Based Industrial Park, Hsin-Chu
- Assignee: Mediatek Inc.
- Current Assignee: Mediatek Inc.
- Current Assignee Address: TW Science-Based Industrial Park, Hsin-Chu
- Agent Winston Hsu; Scott Margo
- Main IPC: H03G3/10
- IPC: H03G3/10

Abstract:
A programmable gain MOS amplifier is disclosed. The programmable gain MOS amplifier is capable of increasing its programmable gain linearly in dB unit by increasing its gain level data linearly. The programmable gain MOS amplifier includes a plurality of gain providers for providing predetermined gains respectively, and a plurality of gain tuners. Each of the plurality of the gain tuners is disposed for adjusting the predetermined gain from the corresponding gain provider. Each of the gain tuners includes a gain enabling module and a gain decreasing module. The gain enabling module allows the corresponding predetermined gain to add to the programmable gain of the MOS amplifier. The gain decreasing module declines the corresponding predetermined gain added to the programmable gain of the MOS amplifier.
Public/Granted literature
- US20100308916A1 Programmable gain MOS amplifier Public/Granted day:2010-12-09
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