Invention Grant
- Patent Title: 2T SRAM cell structure
- Patent Title (中): 2T SRAM单元结构
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Application No.: US12422078Application Date: 2009-04-10
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Publication No.: US07889541B2Publication Date: 2011-02-15
- Inventor: Wei-Chiang Shih , Chen-Hao Po , Kwo-Jen Liu
- Applicant: Wei-Chiang Shih , Chen-Hao Po , Kwo-Jen Liu
- Applicant Address: TW Science-Based Industrial Park, Hsin-Chu
- Assignee: Faraday Technology Corp.
- Current Assignee: Faraday Technology Corp.
- Current Assignee Address: TW Science-Based Industrial Park, Hsin-Chu
- Agent Winston Hsu; Scott Margo
- Priority: TW97113646A 20080415
- Main IPC: G11C11/00
- IPC: G11C11/00
Abstract:
A SRAM cell structure includes a first N type switch, a second N type switch, a first storage node, and a second storage node. The first N type switch has a control terminal connected to a word line and a first terminal connected to a bit line. The second N type switch has a control terminal connected to the word line and a first terminal connected to an inverted bit line. The first storage node has a first terminal connected to a second terminal of the first N type switch. The second storage node has a first terminal connected to a second terminal of the second N type switch.
Public/Granted literature
- US20090257273A1 2T SRAM CELL STRUCTURE Public/Granted day:2009-10-15
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