Invention Grant
US07889570B2 Memory device input buffer, related memory device, controller and system
失效
存储器件输入缓冲器,相关存储器件,控制器和系统
- Patent Title: Memory device input buffer, related memory device, controller and system
- Patent Title (中): 存储器件输入缓冲器,相关存储器件,控制器和系统
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Application No.: US11515799Application Date: 2006-09-06
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Publication No.: US07889570B2Publication Date: 2011-02-15
- Inventor: Dong-woo Lee , Jung-yong Choi , Jong-hyun Choi
- Applicant: Dong-woo Lee , Jung-yong Choi , Jong-hyun Choi
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Volentine & Whitt, PLLC
- Priority: KR10-2005-0084425 20050910
- Main IPC: G11C7/10
- IPC: G11C7/10

Abstract:
Provided are an input buffer of a memory device, a memory controller, and a memory system making use thereof. The input buffer of a memory device is enabled or disabled in response to a first signal showing chip selection information and a second signal showing power down information, and the input buffer is enabled only when the second signal shows a non-power down mode and the first signal shows a chip selection state. The input buffer is at least one selected from the group consisting of a row address strobe input buffer, a column address strobe input buffer, and an address input buffer.
Public/Granted literature
- US20070070782A1 Memory device input buffer, related memory device, controller and system Public/Granted day:2007-03-29
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