发明授权
- 专利标题： Electroplating methods and chemistries for deposition of copper-indium-gallium containing thin films
- 专利标题（中）： 用于沉积含铜铟镓薄膜的电镀方法和化学品
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申请号： US12371546申请日： 2009-02-13
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公开(公告)号： US07892413B2公开(公告)日： 2011-02-22
- 发明人: Serdar Aksu , Jiaxiong Wang , Bulent M. Basol
- 申请人： Serdar Aksu , Jiaxiong Wang , Bulent M. Basol
- 申请人地址： US CA San Jose
- 专利权人： SoloPower, Inc.
- 当前专利权人： SoloPower, Inc.
- 当前专利权人地址： US CA San Jose
- 代理机构： Pillsbury Winthrop Shaw Pittman LLP
- 主分类号： C25D3/56
- IPC分类号： C25D3/56 ; C25D3/58 ; C25D3/62
摘要：
Described is an electrodeposition solution for deposition of a Group IB-IIIA thin film on a conductive surface. In a preferred embodiment, the electrodeposition solution comprises a solvent; a Group IB material source that dissolves in the solvent and provides a Group IB material; a Group IIIA material source that dissolves in the solvent and provides a Group IIIA material; and a blend of at least two complexing agents, one of the at least two complexing agent forming a complex with the Group IB material and the other one of the at least two complexing agent forming a complex with the Group IIIA material; wherein the pH of the solution is at least 7.
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