发明授权
- 专利标题： Hybrid orientation substrate and method for fabrication thereof
- 专利标题（中）： 混合取向基板及其制造方法
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申请号： US12244944申请日： 2008-10-03
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公开(公告)号： US07892899B2公开(公告)日： 2011-02-22
- 发明人: Haining S. Yang , Henry K. Utomo , Judson R. Holt
- 申请人： Haining S. Yang , Henry K. Utomo , Judson R. Holt
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理机构： Scully, Scott, Murphy & Presser, P.C.
- 代理商 Ian D. MacKinnon, Esq.
- 主分类号： H01L21/84
- IPC分类号： H01L21/84
摘要：
A method for fabricating a hybrid orientation substrate provides for: (1) a horizontal epitaxial augmentation of a masked surface semiconductor layer that leaves exposed a portion of a base semiconductor substrate; and (2) a vertical epitaxial augmentation of the exposed portion of the base semiconductor substrate. The resulting surface semiconductor layer and epitaxial surface semiconductor layer adjoin with an interface that is not perpendicular to the base semiconductor substrate. The method also includes implanting through the surface semiconductor layer and the epitaxial surface semiconductor layer a dielectric forming ion to provide a buried dielectric layer that separates the surface semiconductor layer and the epitaxial surface semiconductor layer from the base semiconductor substrate.
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