发明授权
US07892974B2 Method of forming vias in silicon carbide and resulting devices and circuits
有权
在碳化硅和所产生的器件和电路中形成通孔的方法
- 专利标题: Method of forming vias in silicon carbide and resulting devices and circuits
- 专利标题(中): 在碳化硅和所产生的器件和电路中形成通孔的方法
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申请号: US11551286申请日: 2006-10-20
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公开(公告)号: US07892974B2公开(公告)日: 2011-02-22
- 发明人: Zoltan Ring , Scott Thomas Sheppard , Helmut Hagleitner
- 申请人: Zoltan Ring , Scott Thomas Sheppard , Helmut Hagleitner
- 申请人地址: US NC Durham
- 专利权人: Cree, Inc.
- 当前专利权人: Cree, Inc.
- 当前专利权人地址: US NC Durham
- 代理机构: Withrow & Terranova, P.L.L.C.
- 主分类号: H01L21/44
- IPC分类号: H01L21/44
摘要:
A method of fabricating an integrated circuit on a silicon carbide substrate is disclosed that eliminates wire bonding that can otherwise cause undesired inductance. The method includes fabricating a semiconductor device in epitaxial layers on a surface of a silicon carbide substrate and with at least one metal contact for the device on the uppermost surface of the epitaxial layer. The opposite surface of the substrate is then ground and polished until it is substantially transparent. The method then includes masking the polished surface of the silicon carbide substrate to define a predetermined location for at least one via that is opposite the device metal contact on the uppermost surface of the epitaxial layer and etching the desired via in steps. The first etching step etches through the silicon carbide substrate at the desired masked location until the etch reaches the epitaxial layer. The second etching step etches through the epitaxial layer to the device contacts. Finally, metallizing the via provides an electrical path from the first surface of the substrate to the metal contact and to the device on the second surface of the substrate.