发明授权
- 专利标题： Nanowires in thin-film silicon solar cells
- 专利标题（中）： 纳米线在薄膜硅太阳能电池中的应用
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申请号： US11509886申请日： 2006-08-25
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公开(公告)号： US07893348B2公开(公告)日： 2011-02-22
- 发明人: Bastiaan Arie Korevaar , Loucas Tsakalakos
- 申请人： Bastiaan Arie Korevaar , Loucas Tsakalakos
- 申请人地址： US NY Niskayuna
- 专利权人： General Electric Company
- 当前专利权人： General Electric Company
- 当前专利权人地址： US NY Niskayuna
- 代理商 Paul J. DiConza
- 主分类号： H01L31/00
- IPC分类号： H01L31/00
摘要：
In some embodiments, the present invention is directed to photovoltaic (PV) devices comprising silicon (Si) nanowires as active PV elements, wherein such devices are typically thin film Si solar cells. Generally, such solar cells are of the p-i-n type and can be fabricated for front and/or backside (i.e., top and/or bottom) illumination. Additionally, the present invention is also directed at methods of making and using such devices, and to systems and modules (e.g., solar panels) employing such devices.
公开/授权文献
- US20080047604A1 Nanowires in thin-film silicon solar cells 公开/授权日：2008-02-28