发明授权
- 专利标题: Semiconductor FET sensor and method of fabricating the same
- 专利标题(中): 半导体FET传感器及其制造方法
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申请号: US12195302申请日: 2008-08-20
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公开(公告)号: US07893466B2公开(公告)日: 2011-02-22
- 发明人: Jong Heon Yang , In Bok Baek , Chang Geun Ahn , Chan Woo Park , An Soon Kim , Han Young Yu , Chil Seong Ah , Tae Youb Kim , Myung Sim Jun , Moon Gyu Jang
- 申请人: Jong Heon Yang , In Bok Baek , Chang Geun Ahn , Chan Woo Park , An Soon Kim , Han Young Yu , Chil Seong Ah , Tae Youb Kim , Myung Sim Jun , Moon Gyu Jang
- 申请人地址: KR Daejeon
- 专利权人: Electronics and Telecommunications Research Institute
- 当前专利权人: Electronics and Telecommunications Research Institute
- 当前专利权人地址: KR Daejeon
- 优先权: KR10-2007-0129581 20071213
- 主分类号: G01N27/403
- IPC分类号: G01N27/403
摘要:
Provided are a semiconductor Field-Effect Transistor (FET) sensor and a method of fabricating the same. The method includes providing a semiconductor substrate, forming a sensor structure having a fin-shaped structure on the semiconductor substrate, injecting ions for electrical ohmic contact into the sensor structure, and depositing a metal electrode on the sensor structure, immobilizing a sensing material to be specifically combined with a target material onto both sidewall surfaces of the fin-shaped structure, and forming a passage on the sensor structure such that the target material passes through the fin-shaped structure.