发明授权
- 专利标题: Semiconductor device having an adhesive portion with a stacked structure and method for manufacturing the same
- 专利标题(中): 具有层叠结构的粘合部的半导体装置及其制造方法
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申请号: US12350727申请日: 2009-01-08
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公开(公告)号: US07893525B2公开(公告)日: 2011-02-22
- 发明人: Atsuko Iida , Yutaka Onozuka , Kazuhiko Itaya
- 申请人: Atsuko Iida , Yutaka Onozuka , Kazuhiko Itaya
- 申请人地址: JP Tokyo
- 专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人地址: JP Tokyo
- 代理机构: Turocy & Watson, LLP
- 优先权: JP2008-004100 20080111
- 主分类号: H01L21/98
- IPC分类号: H01L21/98
摘要:
It is made possible to restrict warpage at the time of resin cure and achieve a smaller thickness. A semiconductor device includes: a first chip including a MEMS device and a first pad formed on an upper face of the MEMS device, the first pad being electrically connected to the MEMS device; a second chip including a semiconductor device and a second pad formed on an upper face of the semiconductor device, the second pad being electrically connected to the semiconductor device; and an adhesive portion having a stacked structure, and bonding a side face of the first chip and a side face of the second chip, the stacked structure including a first adhesive film formed by adding a first material constant modifier to a first resin, and a second adhesive film formed by adding a second material constant modifier to a second resin.
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