发明授权
- 专利标题： Optically initiated silicon carbide high voltage switch
- 专利标题（中）： 光电启动碳化硅高压开关
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申请号： US11586468申请日： 2006-10-24
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公开(公告)号： US07893541B2公开(公告)日： 2011-02-22
- 发明人: George J. Caporaso , Stephen E. Sampayan , James S. Sullivan , David M. Sanders
- 申请人： George J. Caporaso , Stephen E. Sampayan , James S. Sullivan , David M. Sanders
- 申请人地址： US CA Livermore
- 专利权人： Lawrence Livermore National Security, LLC
- 当前专利权人： Lawrence Livermore National Security, LLC
- 当前专利权人地址： US CA Livermore
- 代理商 James S. Tak
- 主分类号： H01L23/48
- IPC分类号： H01L23/48 ; H01L23/52 ; H01L29/40
摘要：
An improved photoconductive switch having a SiC or other wide band gap substrate material, such as GaAs and field-grading liners composed of preferably SiN formed on the substrate adjacent the electrode perimeters or adjacent the substrate perimeters for grading the electric fields.
公开/授权文献
- US20070092812A1 Optically initiated silicon carbide high voltage switch 公开/授权日：2007-04-26