发明授权
- 专利标题： Systems and methods for controlling deposition of a charge on a wafer for measurement of one or more electrical properties of the wafer
- 专利标题（中）： 用于控制在晶片上沉积电荷以测量晶片的一个或多个电性能的系统和方法
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申请号： US11465893申请日： 2006-08-21
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公开(公告)号： US07893703B2公开(公告)日： 2011-02-22
- 发明人: Jeffrey A. Rzepiela , Yiping Feng , Shiyou Pei , Alexander Kagan , Jianou Shi , Sergio Edelstein
- 申请人： Jeffrey A. Rzepiela , Yiping Feng , Shiyou Pei , Alexander Kagan , Jianou Shi , Sergio Edelstein
- 申请人地址： US CA Milpitas
- 专利权人： KLA-Tencor Technologies Corp.
- 当前专利权人： KLA-Tencor Technologies Corp.
- 当前专利权人地址： US CA Milpitas
- 代理商 Ann Marie Mewherter
- 主分类号： G01R31/308
- IPC分类号： G01R31/308
摘要：
Systems and methods for controlling deposition of a charge on a wafer for measurement of one or more electrical properties of the wafer are provided. One system includes a corona source configured to deposit the charge on the wafer and a sensor configured to measure one or more conditions within the corona source. This system also includes a control subsystem configured to alter one or more parameters of the corona source based on the one or more conditions. Another system includes a corona source configured to deposit the charge on the wafer and a mixture of gases disposed within a discharge chamber of the corona source during the deposition of the charge. The mixture of gases alters one or more parameters of the charge deposited on the wafer.
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