发明授权
- 专利标题: Through hole capacitor and method of manufacturing the same
- 专利标题(中): 通孔电容器及其制造方法
-
申请号: US12046422申请日: 2008-03-11
-
公开(公告)号: US07894178B2公开(公告)日: 2011-02-22
- 发明人: Bang-Hao Wu , Li-Duan Tsai , Min-Lin Lee , Cheng-Liang Cheng
- 申请人: Bang-Hao Wu , Li-Duan Tsai , Min-Lin Lee , Cheng-Liang Cheng
- 申请人地址: TW Hsinchu
- 专利权人: Industrial Technology Research Institute
- 当前专利权人: Industrial Technology Research Institute
- 当前专利权人地址: TW Hsinchu
- 代理机构: Jianq Chyun IP Office
- 优先权: TW96149239A 20071221
- 主分类号: H01G9/04
- IPC分类号: H01G9/04 ; H01G9/145 ; H01G4/228
摘要:
A through hole capacitor at least including a substrate, an anode layer, a dielectric layer, a first cathode layer, and a second cathode layer is provided. The substrate has a plurality of through holes. The anode layer is disposed on the inner surface of at least one through hole, and the surface of the anode layer is a porous structure. The dielectric layer is disposed on the porous structure of the anode layer. The first cathode layer covers a surface of the dielectric layer. The second cathode layer covers a surface of the first cathode layer, and the conductivity of the second cathode layer is greater than that of the first cathode layer. The through hole capacitor can be used for impedance control, as the cathode layers of the through hole are used for signal transmission.
公开/授权文献
信息查询