发明授权
- 专利标题： Semiconductor substrate cleaning liquid and semiconductor substrate cleaning process
- 专利标题（中）： 半导体衬底清洗液和半导体衬底清洗工艺
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申请号： US11893752申请日： 2007-08-16
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公开(公告)号： US07896970B2公开(公告)日： 2011-03-01
- 发明人: Hiroshi Tomita , Yuji Yamada , Hiroaki Yamada , Norio Ishikawa , Yumiko Abe
- 申请人： Hiroshi Tomita , Yuji Yamada , Hiroaki Yamada , Norio Ishikawa , Yumiko Abe
- 申请人地址： JP Tokyo JP Tokyo
- 专利权人： Kabushiki Kaisha Toshiba,Kanto Kagaku Labushiki Kaisha
- 当前专利权人： Kabushiki Kaisha Toshiba,Kanto Kagaku Labushiki Kaisha
- 当前专利权人地址： JP Tokyo JP Tokyo
- 代理机构： Edwards Angell Palmer & Dodge LLP
- 代理商 Peter F. Corless; Nicholas J. DiCeglie
- 优先权： JP2004-233670 20040810
- 主分类号： H01L21/02
- IPC分类号： H01L21/02
摘要：
A semiconductor substrate cleaning liquid composition is provided that includes one or more types selected from the group consisting of a compound having at least two sulfonic acid groups per molecule, phytic acid, and a condensed phosphoric acid compound; an inorganic acid; and water. There is also provided a process for cleaning a semiconductor substrate that includes a first step of cleaning the semiconductor substrate using the semiconductor substrate cleaning liquid composition and, subsequent to the first step, a second step of cleaning the semiconductor substrate with pure water, ozone water formed by dissolving ozone gas in pure water, or aqueous hydrogen peroxide.
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