Invention Grant
- Patent Title: Dividing method for wafer having film on the front side thereof
- Patent Title (中): 在其前侧具有膜的晶片的分割方法
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Application No.: US12468556Application Date: 2009-05-19
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Publication No.: US07897488B2Publication Date: 2011-03-01
- Inventor: Yosuke Watanabe , Ryugo Oba , Masaru Nakamura
- Applicant: Yosuke Watanabe , Ryugo Oba , Masaru Nakamura
- Applicant Address: JP Tokyo
- Assignee: Disco Corporation
- Current Assignee: Disco Corporation
- Current Assignee Address: JP Tokyo
- Agency: Greer, Burns & Crain, Ltd.
- Priority: JP2008-144072 20080602
- Main IPC: H01L21/00
- IPC: H01L21/00

Abstract:
A wafer dividing method for dividing a wafer having a film on the front side thereof. The wafer dividing method includes a modified layer forming step of applying a laser beam having a transmission wavelength to the substrate of the wafer from the front side thereof along the streets so that a focal point of the laser beam is set inside the substrate, thereby forming a modified layer in the substrate along each street, a film dividing step of applying a laser beam having an absorption wavelength to the film from the front side of the wafer along each street to thereby form a laser processed groove for dividing the film along each street, a back grinding step of grinding the back side of the substrate of the wafer to thereby reduce the thickness of the wafer to a predetermined thickness, a wafer supporting step of attaching the wafer to a dicing tape supported to an annular frame, and a wafer breaking step of applying an external force to the wafer by expanding the dicing tape to thereby break the wafer along each street.
Public/Granted literature
- US20090298263A1 DIVIDING METHOD FOR WAFER HAVING FILM ON THE FRONT SIDE THEREOF Public/Granted day:2009-12-03
Information query
IPC分类: