发明授权
- 专利标题: Formation of epitaxial layer containing silicon and carbon
- 专利标题(中): 形成含有硅和碳的外延层
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申请号: US11609608申请日: 2006-12-12
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公开(公告)号: US07897495B2公开(公告)日: 2011-03-01
- 发明人: Zhiyuan Ye , Andrew M. Lam , Yihwan Kim
- 申请人: Zhiyuan Ye , Andrew M. Lam , Yihwan Kim
- 申请人地址: US CA Santa Clara
- 专利权人: Applied Materials, Inc.
- 当前专利权人: Applied Materials, Inc.
- 当前专利权人地址: US CA Santa Clara
- 代理机构: Diehl Servilla, LLC
- 主分类号: H01L21/205
- IPC分类号: H01L21/205
摘要:
Methods for formation of epitaxial layers containing silicon are disclosed. Specific embodiments pertain to the formation and treatment of epitaxial layers in semiconductor devices, for example, Metal Oxide Semiconductor Field Effect Transistor (MOSFET) devices. In specific embodiments, the formation of the epitaxial layer involves exposing a substrate in a process chamber to deposition gases including two or more silicon source such as silane and a higher order silane. Embodiments include flowing dopant source such as a phosphorus dopant, during formation of the epitaxial layer, and continuing the deposition with the silicon source gas without the phosphorus dopant.