发明授权
US07897517B2 Method of selectively depositing materials on a substrate using a supercritical fluid
有权
使用超临界流体在衬底上选择性地沉积材料的方法
- 专利标题： Method of selectively depositing materials on a substrate using a supercritical fluid
- 专利标题（中）： 使用超临界流体在衬底上选择性地沉积材料的方法
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申请号： US12533543申请日： 2009-07-31
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公开(公告)号： US07897517B2公开(公告)日： 2011-03-01
- 发明人: Chien M. Wai , Hiroyuki Ohde , Steve Kramer
- 申请人： Chien M. Wai , Hiroyuki Ohde , Steve Kramer
- 申请人地址： US ID Boise
- 专利权人： Micron Technology, Inc.
- 当前专利权人： Micron Technology, Inc.
- 当前专利权人地址： US ID Boise
- 代理机构： Wells St. Johns P.S.
- 主分类号： H01L21/31
- IPC分类号： H01L21/31 ; H01L21/469
摘要：
A method for depositing one or more materials on a substrate, such as for example, a semiconductor substrate that includes providing the substrate; applying a polymer film to at least a portion of a surface of the substrate; and exposing the semiconductor substrate to a supercritical fluid containing at least one reactant for a time sufficient for the supercritical fluid to swell the polymer and for the at least one reactant to penetrate the polymer film. The reactant is reacted to cause the deposition of the material on at least a portion of the substrate. The substrate is removed from the supercritical fluid, and the polymer film is removed. The process permits the precise deposition of materials without the need for removal of excess material using chemical, physical, or a combination of chemical and physical removal techniques.
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