发明授权
- 专利标题： Integrated circuit having memory cells and method of manufacture
- 专利标题（中）： 具有存储单元和制造方法的集成电路
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申请号： US11940704申请日： 2007-11-15
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公开(公告)号： US07898006B2公开(公告)日： 2011-03-01
- 发明人: Ulrike Gruening-von Schwerin
- 申请人： Ulrike Gruening-von Schwerin
- 申请人地址： DE Munich
- 专利权人： Qimonda AG
- 当前专利权人： Qimonda AG
- 当前专利权人地址： DE Munich
- 代理机构： Dicke, Billig & Czaja, PLLC
- 主分类号： H01L29/78
- IPC分类号： H01L29/78
摘要：
An integrated circuit having memory cells and a method of manufacture is disclosed. One embodiment provides a switching active volume and a selection transistor coupled in series between a first electrode and a second electrode. The selection transistor is a vertical transistor for at least partially guiding a substantially vertical current flow. The second electrode includes a buried diffused ground plate formed in a substrate. A metal-containing region at least partially contacting the buried diffused ground plate is provided, the metal-containing region at least extending below the selection transistor.
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