Invention Grant
- Patent Title: Photodiode with controlled current leakage
- Patent Title (中): 具有受控电流泄漏的光电二极管
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Application No.: US12325304Application Date: 2008-12-01
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Publication No.: US07898055B2Publication Date: 2011-03-01
- Inventor: Peter Steven Bui , Narayan Dass Taneja
- Applicant: Peter Steven Bui , Narayan Dass Taneja
- Applicant Address: US CA Hawthorne
- Assignee: UDT Sensors, Inc.
- Current Assignee: UDT Sensors, Inc.
- Current Assignee Address: US CA Hawthorne
- Agency: Novel IP
- Main IPC: H01L31/06
- IPC: H01L31/06
Abstract:
The present invention is directed towards radiation detectors and methods of detecting incident radiation. In particular the present invention is directed towards photodiodes with controlled current leakage detector structures and a method of manufacturing photodiodes with controlled current leakage detector structures. The photodiodes of the present invention are advantageous in that they have special structures to substantially reduce detection of stray light. Additionally, the present invention gives special emphasis to the design, fabrication, and use of photodiodes with controlled leakage current.
Public/Granted literature
- US20090140366A1 Photodiode with Controlled Current Leakage Public/Granted day:2009-06-04
Information query
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