Invention Grant
- Patent Title: Tunneling magnetic sensing element including enhancing layer having high Fe concentration in the vicinity of barrier layer
- Patent Title (中): 隧道磁感应元件包括在阻挡层附近具有高Fe浓度的增强层
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Application No.: US11880730Application Date: 2007-07-24
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Publication No.: US07898776B2Publication Date: 2011-03-01
- Inventor: Ryo Nakabayashi , Naoya Hasegawn , Masamichi Saito , Masahiko Ishizone , Yosuke Ide , Takuya Seino , Kazumasa Nishimura
- Applicant: Ryo Nakabayashi , Naoya Hasegawn , Masamichi Saito , Masahiko Ishizone , Yosuke Ide , Takuya Seino , Kazumasa Nishimura
- Applicant Address: JP Tokyo
- Assignee: TDK Corporation
- Current Assignee: TDK Corporation
- Current Assignee Address: JP Tokyo
- Agency: Brinks Hofer Gilson & Lione
- Priority: JP2006-212237 20060803
- Main IPC: G11B5/33
- IPC: G11B5/33 ; G11B5/127
Abstract:
A tunneling magnetic sensing element is provided, in which an increase in the magnetostriction of a free magnetic layer is reduced and the rate of change in resistance is high. A laminate T1 constituting the tunneling magnetic sensing element includes a portion in which a pinned magnetic layer, a barrier layer, and a free magnetic layer are disposed in that order from the bottom. An enhancing layer disposed on the barrier layer side of the free magnetic layer includes a first enhancing layer on the barrier layer side and a second enhancing layer on the soft magnetic layer side, and the Fe content of a CoFe alloy constituting the first enhancing layer is specified to be larger than the Fe content of the CoFe alloy of the second enhancing layer.
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