发明授权
- 专利标题： Multi-layered memory devices
- 专利标题（中）： 多层存储设备
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申请号： US12232146申请日： 2008-09-11
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公开(公告)号： US07898893B2公开(公告)日： 2011-03-01
- 发明人: Jaechul Park , Keewon Kwon , Youngsoo Park , Seunghoon Lee , Seungeon Ahn
- 申请人： Jaechul Park , Keewon Kwon , Youngsoo Park , Seunghoon Lee , Seungeon Ahn
- 申请人地址： KR Gyeonggi-do
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人地址： KR Gyeonggi-do
- 代理机构： Harness, Dickey & Pierce, PLC
- 优先权： KR10-2007-0092651 20070912; KR10-2008-0047092 20080521
- 主分类号： G11C8/00
- IPC分类号： G11C8/00
摘要：
A multi-layered memory device is provided. The multi-layered memory device includes two or more memory units and an active circuit unit arranged between each of the two or more memory units. The active circuit includes a decoder. Each memory unit includes one or more memory layers. Each memory layer includes a memory array.
公开/授权文献
- US20090086525A1 Multi-layered memory devices 公开/授权日：2009-04-02
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