Invention Grant
US07901586B2 Method of manufacturing self-ordered nanochannel-array and method of manufacturing nanodot using the nanochannel-array
失效
使用纳米通道阵列制造自定序纳米通道阵列的方法和制造纳米点的方法
- Patent Title: Method of manufacturing self-ordered nanochannel-array and method of manufacturing nanodot using the nanochannel-array
- Patent Title (中): 使用纳米通道阵列制造自定序纳米通道阵列的方法和制造纳米点的方法
-
Application No.: US11882112Application Date: 2007-07-30
-
Publication No.: US07901586B2Publication Date: 2011-03-08
- Inventor: In-kyeong Yoo , Soo-hwan Jeong , Sun-ae Seo , In-sook Kim
- Applicant: In-kyeong Yoo , Soo-hwan Jeong , Sun-ae Seo , In-sook Kim
- Applicant Address: KR Suwon-Si, Gyeonggi-Do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-Si, Gyeonggi-Do
- Agency: Buchanan Ingersoll & Rooney PC
- Priority: KR2003-25082 20030421
- Main IPC: B44C1/22
- IPC: B44C1/22 ; H01L21/302

Abstract:
A method of manufacturing a nanochannel-array and a method of fabricating a nanodot using the nanochannel-array are provided. The nanochannel-array manufacturing method includes: performing first anodizing to form a first alumina layer having a channel array formed by a plurality of cavities on an aluminum substrate; etching the first alumina layer to a predetermined depth and forming a plurality of concave portions on the aluminum substrate, wherein each concave portion corresponds to the bottom of each channel of the first alumina layer; and performing second anodizing to form a second alumina layer having an array of a plurality of channels corresponding to the plurality of concave portions on the aluminum substrate. The array manufacturing method makes it possible to obtain finely ordered cavities and form nanoscale dots using the cavities.
Public/Granted literature
Information query