Invention Grant
- Patent Title: Method of fabricating thin film device
- Patent Title (中): 制造薄膜器件的方法
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Application No.: US12479298Application Date: 2009-06-05
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Publication No.: US07902001B2Publication Date: 2011-03-08
- Inventor: Sang Jin Kim , Yongsoo Oh , Hwan-Soo Lee
- Applicant: Sang Jin Kim , Yongsoo Oh , Hwan-Soo Lee
- Applicant Address: KR Gyunggi-do
- Assignee: Samsung Electro-Mechanics Co., Ltd.
- Current Assignee: Samsung Electro-Mechanics Co., Ltd.
- Current Assignee Address: KR Gyunggi-do
- Agency: McDermott Will & Emery LLP
- Priority: KR10-2008-0112955 20081113
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L21/84

Abstract:
Provided is a sacrifice layer formed on a first substrate. A thin film laminated body is formed on the sacrifice layer. A separation groove exposing the sacrifice layer is formed to divide the thin film laminated body into at least one thin film device. The sacrifice layer is partially removed using a dry etching process. After the partial removal of the sacrifice layer, a remaining sacrifice layer region maintains the thin film device on the first substrate. A supporting structure is temporarily joined to the thin film device. The thin film device joined to the supporting structure is separated from the first substrate. Then, the remaining sacrifice layer is removed. The thin film device joined to the supporting structure is joined to a second substrate. Finally, the supporting structure is separated from the thin film device.
Public/Granted literature
- US20100120232A1 METHOD OF FABRICATING THIN FILM DEVICE Public/Granted day:2010-05-13
Information query
IPC分类: