发明授权
- 专利标题: Cleaving of substrates
- 专利标题(中): 切割基材
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申请号: US12538903申请日: 2009-08-11
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公开(公告)号: US07902091B2公开(公告)日: 2011-03-08
- 发明人: Deepak A. Ramappa
- 申请人: Deepak A. Ramappa
- 申请人地址: US MA Gloucester
- 专利权人: Varian Semiconductor Equipment Associates, Inc.
- 当前专利权人: Varian Semiconductor Equipment Associates, Inc.
- 当前专利权人地址: US MA Gloucester
- 主分类号: H01L21/00
- IPC分类号: H01L21/00
摘要:
An improved process of substrate cleaving and a device to perform the cleaving are disclosed. In the traditional cleaving process, a layer of microbubbles is created within a substrate through the implantation of ions of a gaseous species, such as hydrogen or helium. The size and spatial distribution of these microbubbles is enhanced through the use of ultrasound energy. The ultrasound energy causes smaller microbubbles to join together and also reduces the straggle. An ultrasonic transducer is acoustically linked with the substrate to facilitate these effects. In some embodiments, the ultrasonic transducer is in communication with the platen, such that ultrasound energy can be applied during ion implantation and/or immediately thereafter. In other embodiments, the ultrasonic energy is applied to the substrate during a subsequent process, such as an anneal.
公开/授权文献
- US20100041246A1 Cleaving Of Substrates 公开/授权日:2010-02-18
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